CP191V-2N2222A-CT20

CP191V-2N2222A NPN - Small Signal Transistor Die w w w. c e n t r a l s e m i . c o m The CP191V-2N2222A is a silicon NPN small signal transistor designed for general purpose switching applications. MECHANICAL SPECIFICATIONS: B E BACKSIDE COLLECTOR R3 Die Size 16.5 x 16.5 MILS Die Thickness 7.1 MILS Base Bonding Pad Size 3.5 x 4.3 MILS Emitter Bonding Pad Size 3.5 x 4.3 MILS Top Side Metalization Al – 13,000Å Back Side Metalization Au-As – 9,000Å Scribe Alley Width 1.96 MILS Wafer Diameter 5 INCHES Gross Die Per Wafer 62,510 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Operating and Storage Junction Temperature ELECTRICAL SYMBOL ICBO ICEV IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE hFE fT Cob Cib SYMBOL VCBO VCEO VEBO IC TJ, Tstg CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCB=60V VCE=60V, VEB=3.0V VEB=3.0V IC=10µA 75 IC=10mA 40 IE=10µA 6.0 IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA 0.6 IC=500mA, IB=50mA VCE=10V, IC=0.1mA 35 VCE=10V, IC=1.0mA 50 VCE=10V, IC=10mA 75 VCE=10V, IC=150mA 100 VCE=1.0V, IC=150mA 50 VCE=10V, IC=500mA 40 VCE=20V, IC=20mA, f=100MHz 300 VCB=10V, IE=0, f=100kHz VEB=0.5V, IC=0, f=100kHz 75 40 6.0 800 -65 to +150 UNITS V V V mA °C MAX 10 10 UNITS nA nA 10 nA V V V V V V V 0.3 1.0 1.2 2.0 300 8.0 25 MHz pF pF R1 (24-April 2019) CP191V-2N2222A Typical Electrical Characteristics w w w. c e n t r a l s e m i . c o m R1 (24-April 2019) BARE DIE PACKING OPTIONS BARE DIE IN TRAY (WAFFLE) PACK CT: Singulated die in tray (waffle) pack. (example: CP211-PART NUMBER-CT) CM: S  ingulated die in tray (waffle) pack 100% visually inspected as per MIL-STD-750, (method 2072 transistors, method 2073 diodes). (example: CP211-PART NUMBER-CM) UNSAWN WAFER WN: Full wafer, unsawn, 100% tested with reject die inked. (example: CP211-PART NUMBER-WN) SAWN WAFER ON PLASTIC RING WR: F  ull wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. (example: CP211-PART NUMBER-WR) Please note: Sawn Wafer on Metal Frame (WS) is possible as a special order. Please contact your Central Sales Representative at 631-435-1110. Visit the Central website for a complete listing of specifications: www.centralsemi.com/bdspecs R2 (3-April 2017) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). CONTACT US Corporate Headquarters & Customer Support Team Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Main Tel: (631) 435-1110 Main Fax: (631) 435-1824 Support Team Fax: (631) 435-3388 www.centralsemi.com Worldwide Field Representatives: www.centralsemi.com/wwreps Worldwide Distributors: www.centralsemi.com/wwdistributors For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER, which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms w w w. c e n t r a l s e m i . c o m (001)