CP191V

PROCESS Small Signal Transistor CP191V NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 41,699 PRINCIPAL DEVICE TYPES CMLT2222A CMLT2207 CMLM2205 CMKT2207 EPITAXIAL PLANAR 16.5 x 16.5 MILS 7.1 MILS 3.5 x 4.3 MILS 3.5 x 4.3 MILS Al - 30,000Å Au-As - 13,000Å R1 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP191V Typical Electrical Characteristics R1 (22-March 2010) w w w. c e n t r a l s e m i . c o m