CP191_06

Central TM PROCESS CP191 Semiconductor Corp. Small Signal Transistor NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 41,690 PRINCIPAL DEVICE TYPES 2N2219A 2N2222A CMPT2222A CMST2222A CXT2222A CZT2222A MD2219A PN2222A BACKSIDE COLLECTOR EPITAXIAL PLANAR 16.5 x 16.5 MILS 9.0 MILS 3.5 x 4.3 MILS 3.5 x 4.3 MILS Al - 30,000Å Au - 18,000Å 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (14-August 2006) Central Central TM PROCESS CP191 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (14-August 2006)