CP192V

PROCESS CP192V Small Signal Transistors NPN - Amp Switch Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 52,920 PRINCIPAL DEVICE TYPES 2N3904 CMKT3904 CMLT3904E CMPT3904 CMST3904 CXT3904 CZT3904 EPITAXIAL PLANAR 13 x 17 MILS 7.1 MILS 3.0 X 3.0 MILS 3.0 X 3.0 MILS Al - 30,000Å Au - 18,000Å BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (13-February 2006) PROCESS CP192V Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (13-February 2006)