CP211_10

PROCESS Power Transistor CP211 NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 1,450 PRINCIPAL DEVICE TYPES 2N3054A CJD41C TIP41C EPITAXIAL PLANAR 80 x 99 MILS 12.5 MILS 12 x 32 MILS 13 x 48 MILS Al - 30,000Å Cr/Ni/Ag - 16,000Å R5 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP211 Typical Electrical Characteristics R5 (22-March 2010) w w w. c e n t r a l s e m i . c o m