CP219_10

PROCESS Power Transistor CP219 NPN - High Current Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 1,670 PRINCIPAL DEVICE TYPES 2N5336 2N5337 2N5338 2N5339 2N5427 2N5428 2N5429 2N5430 D44H11 CJD44H11 BACKSIDE COLLECTOR EPITAXIAL PLANAR 83 x 83 MILS 11 MILS 13.2 x 19.7 MILS 13.2 x 21.2 MILS Al - 30,000Å Au - 12,000Å R3 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP219 Typical Electrical Characteristics R3 (22-March 2010) w w w. c e n t r a l s e m i . c o m