CP229

PROCESS CP229 Small Signal Transistors NPN - RF Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 17,000 PRINCIPAL DEVICE TYPES 2N5109 EPITAXIAL PLANAR 21.7 x 21.7 MILS 8.7 MILS 3.2 MILS Diameter 3.4 x 3.4 MILS Al - 10,000Å Au - 10,000Å 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (23- September 2005)