PROCESS
CP235
Power Transistor
NPN - Silicon Power Transistor Chip
Central
TM
Semiconductor Corp.
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metallization Back Side Metallization GLASS PASSIVATED MESA 106 x 106 MILS 12 MILS 25 x 33 MILS 30 x 36 MILS Al 50,000Å Ag 10,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER 950 PRINCIPAL DEVICE TYPES 2N3055
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R1 (20-March 2006)
Central
TM
PROCESS
CP235
Semiconductor Corp.
Typical Electrical Characteristics
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R1 (20-March 2006)
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