CP285

PROCESS CP285 Power Transistor NPN - Silicon Power Transistor Chip Central TM Semiconductor Corp. PROCESS DETAILS Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization 105 x 105 MILS 9.5 MILS 32 x 22 MILS 33 x 24 MILS Al - 45,000Å Ti/Ni/Ag - (3000Å, 10,000Å, 10,000Å) GEOMETRY GROSS DIE PER 5 INCH WAFER 1,486 PRINCIPAL DEVICE TYPES MJE13005 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (20-January 2006)