CP302

PROCESS Small Signal Transistor CP302 NPN - Silicon RF Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 53,730 PRINCIPAL DEVICE TYPES MPSH10 MPSH11 CMPTH10 CMPTH11 EPITAXIAL PLANAR 14.5 x 14.5 MILS 9.0 MILS 2.3 x 2.3 MILS 2.5 x 2.3 MILS Al - 30,000Å Au - 18,000Å R3 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP302 Typical Electrical Characteristics R3 (22-March 2010) w w w. c e n t r a l s e m i . c o m