CP304

PROCESS Small Signal Transistor CP304 NPN - High Current Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 22,400 PRINCIPAL DEVICE TYPES MPSA05 MPSA06 EPITAXIAL PLANAR 22 x 22 MILS 9.0 MILS 5.7 x 3.9 MILS 5.3 x 3.9 MILS Al - 30,000Å Au - 18,000Å R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP304 Typical Electrical Characteristics R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m