CP307

PROCESS Small Signal Transistor NPN - Silicon Darlington Transistor Chip CP307 Central Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 15,440 PRINCIPAL DEVICE TYPES 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CXTA14 CZTA14 MPSA13 MPSA14 EPITAXIAL PLANAR 27 x 27 MILS 9.0 MILS 5.3 x 3.8 MILS 5.3 x 6.5 MILS Al - 30,000Å Au - 18,000Å BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (1-August 2002) Central Central TM PROCESS CP307 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (1-August 2002)