CP309_10

PROCESS Power Transistor CP309 NPN - Low Saturation Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 6,285 PRINCIPAL DEVICE TYPES CMPT3090L CXT3090L CZT3090L CMXT3090L EPITAXIAL PLANAR 41.3 x 41.3 MILS 9.0 MILS 9.4 x 9.2 MILS 12.8 x 10.2 MILS Al - 30,000Å Ag - 12,000Å E B BACKSIDE COLLECTOR R1 R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP309 Typical Electrical Characteristics R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m