CP312_10

PROCESS Power Transistor CP312 NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 2,230 PRINCIPAL DEVICE TYPES CZT3120 EPITAXIAL PLANAR 70 x 70 MILS 9.0 MILS 11.4 x 18.1 MILS 13.8 x 23.6 MILS Al - 30,000Å Ti/Ni/Ag - 11,300Å R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP312 Typical Electrical Characteristics R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m