CP314_08

Central Central TM PROCESS CP314 Semiconductor Corp. Small Signal Transistor NPN - High Current Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 6,936 PRINCIPAL DEVICE TYPES CBCP68 CBCX68 CZT651 MPS650 MPS651 EPITAXIAL PLANAR 40 x 40 MILS 9.0 MILS 7.9 x 8.7 MILS 9.0 x 14 MILS Al - 30,000Å Au - 18,000Å BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (8-October 2008) Central Central TM PROCESS CP314 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (8-October 2008)