CP315V

PROCESS CP315V Power Transistors NPN - High Current Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 6,936 PRINCIPAL DEVICE TYPES CXT3150 CZT3150 Epitaxial Planar 40 x 40 MILS 7.1 MILS 7.9 x 8.7 MILS 9.0 x 14 MILS Al - 30,000Å Au - 18,000Å 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (5- January 2006)