CP315V_10

PROCESS Power Transistors CP315V NPN - High Current Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER EPITAXIAL PLANAR 40 x 40 MILS 7.1 MILS 7.9 x 8.7 MILS 9.0 x 14 MILS Al - 30,000Å Au - 12,000Å 6,936 PRINCIPAL DEVICE TYPES CXT3150 CZT3150 R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP315V Typical Electrical Characteristics R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m