CP327V

PROCESS Small Signal Transistor CP327V NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 33,085 PRINCIPAL DEVICE TYPES CMLT6427E CMST6427E EPITAXIAL PLANAR 23 x 23 MILS 7.1 MILS 4.7 x 4.7 MILS 4.7 x 4.7 MILS Al-Si - 30,000Å Au - 12,000Å BACKSIDE COLLECTOR R0 R1 (9-September 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP327V Typical Electrical Characteristics R1 (9-September 2010) w w w. c e n t r a l s e m i . c o m