CP341V_10

PROCESS Small Signal Transistors CP341V NPN - Low VCE(SAT) Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 54,330 PRINCIPAL DEVICE TYPES CMLT3410 CMPT3410 CMST3410 CMUT3410 CXT3410 EPITAXIAL PLANAR 18 x 18 MILS 7.1 MILS 3.8 x 3.8 MILS 3.8 x 3.8 MILS Al/Si - 30,000Å Au - 12,000Å R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP341V Typical Electrical Characteristics R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m