CP392V_10

PROCESS Smal Signal Transistor CP392V NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 93,826 PRINCIPAL DEVICE TYPES 2N3904 CMKT3904 CMLT3904E CMPT3904 CMPT3904E CMST3904 CXT3904 CZT3904 R0 EPITAXIAL PLANAR 11 x 11 MILS 7.1 MILS 3.7 x 3.7 MILS 3.7 x 3.7 MILS Al - 30,000Å Au - 12,000Å BACKSIDE COLLECTOR R2 (13-May 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP392V Typical Electrical Characteristics R2 (13-May 2010) w w w. c e n t r a l s e m i . c o m