CP517

PROCESS Power Transistor PNP - Darlington Chip CP517 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 910 PRINCIPAL DEVICE TYPES 2N6040 2N6041 2N6042 2N6299 EPITAXIAL BASE 111 X 111 MILS 10 MILS 20 X 30 MILS 20 X 26 MILS Al - 30,000Å Au/Cr/Ni/Au - 6,000Å BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) Central TM PROCESS CP517 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002)