CP566

PROCESS Small Signal Transistor PNP - Silicon Chopper Transistor Chip CP566 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 11,380 PRINCIPAL DEVICE TYPES CMPT404A MPS404A EPITAXIAL PLANAR 31.5 x 31.5 MILS 11 MILS 7.8 x 6.2 MILS 8.0 x 5.3 MILS Al - 12,000Å Au - 10,000Å BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) Central TM PROCESS CP566 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002)