CP591X-2N2907A-CT

CP591X-2N2907A PNP - General Purpose Transistor Die 0.6 Amp, 60 Volt w w w. c e n t r a l s e m i . c o m The CP591X-2N2907A is a silicon PNP transistor designed for general purpose applications. MECHANICAL SPECIFICATIONS: Die Size 19.3 x 19.3 MILS Die Thickness 5.9 MILS Base Bonding Pad Size 3.5 x 4.3 MILS Emitter Bonding Pad Size 3.5 x 4.5 MILS Top Side Metalization Al – 13,000Å Back Side Metalization Au – 9,000Å Scribe Alley Width 1.75 MILS Wafer Diameter 5 INCHES Gross Die Per Wafer 45,900 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage SYMBOL VCBO VCEO UNITS V 60 V VEBO IC 5.0 V 600 mA TJ, Tstg -65 to +150 °C MIN MAX 10 UNITS nA 50 nA Emitter-Base Voltage Continuous Collector Current Operating and Storage Junction Temperature 60 ELECTRICAL SYMBOL ICBO ICEV CHARACTERISTICS: (TA=25°C) TEST CONDITIONS VCB=50V VCE=30V, VEB=0.5V BVCBO BVCEO IC=10µA 60 IC=10mA 60 V BVEBO VCE(SAT) IE=10µA 5.0 V VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE fT Cob IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, VCE=10V, 100 IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA VCE=20V, IC=50mA, f=100MHz 100 Cib ton toff VCC=30V, IC=150mA, IB1=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA 0.4 V 1.6 V 1.3 V 2.6 V 75 IC=1.0mA VCB=10V, IE=0, f=1.0MHz VEB=2.0V, IC=0, f=1.0MHz V 100 300 50 200 MHz 8.0 pF 30 pF 45 ns 100 ns R2 (25-April 2017) CP591X-2N2907A Typical Electrical Characteristics w w w. c e n t r a l s e m i . c o m R2 (25-April 2017) BARE DIE PACKING OPTIONS BARE DIE IN TRAY (WAFFLE) PACK CT: Singulated die in tray (waffle) pack. (example: CP211-PART NUMBER-CT) CM: S  ingulated die in tray (waffle) pack 100% visually inspected as per MIL-STD-750, (method 2072 transistors, method 2073 diodes). (example: CP211-PART NUMBER-CM) UNSAWN WAFER WN: Full wafer, unsawn, 100% tested with reject die inked. (example: CP211-PART NUMBER-WN) SAWN WAFER ON PLASTIC RING WR: F  ull wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. (example: CP211-PART NUMBER-WR) Please note: Sawn Wafer on Metal Frame (WS) is possible as a special order. Please contact your Central Sales Representative at 631-435-1110. Visit the Central website for a complete listing of specifications: www.centralsemi.com/bdspecs R2 (3-April 2017) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). CONTACT US Corporate Headquarters & Customer Support Team Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Main Tel: (631) 435-1110 Main Fax: (631) 435-1824 Support Team Fax: (631) 435-3388 www.centralsemi.com Worldwide Field Representatives: www.centralsemi.com/wwreps Worldwide Distributors: www.centralsemi.com/wwdistributors For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER, which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms w w w. c e n t r a l s e m i . c o m (001)