CP591X

PROCESS Small Signal Transistor CP591X PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 45,900 PRINCIPAL DEVICE TYPES 2N2905A 2N2907A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A BACKSIDE COLLECTOR R1 EPITAXIAL PLANAR 19 x 19 MILS 5.9 MILS 3.5 x 4.3 MILS 3.5 x 4.5 MILS Al - 13,000Å Au - 18,000Å R2 (10-February 2011) w w w. c e n t r a l s e m i . c o m PROCESS CP591X Typical Electrical Characteristics R2 (10-February 2011) w w w. c e n t r a l s e m i . c o m