CP592V

PROCESS CP592V Small Signal Transistors PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIER PER 4 INCH WAFER 47,150 PRINCIPAL DEVICE TYPES 2N3906 CMKT3906 CMLT3906E CMPT3906 CMST3906 CXT3906 CZT3906 EPITAXIAL PLANAR 12 x 20 MILS 7.1 MILS 3.6 X 3.6 MILS 3.6 X 3.6 MILS Al - 30,000Å Au - 18,000Å BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (13- February 2006) PROCESS CP592V Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (13- February 2006)