CP611_10

PROCESS Power Transistor CP611 PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 1,300 PRINCIPAL DEVICE TYPES CJD42C TIP42C EPITAXIAL PLANAR 80 x 99 MILS 12.5 ± 1 MILS 12 x 32 MILS 13 x 46 MILS Al - 30,000Å Ag - 16,000Å BACKSIDE COLLECTOR R5 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP611 Typical Electrical Characteristics R5 (22-March 2010) w w w. c e n t r a l s e m i . c o m