CP618

PROCESS Small Signal Transistor PNP - Silicon RF Transistor Chip CP618 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 23,990 PRINCIPAL DEVICE TYPES CM5583 EPITAXIAL PLANAR 21.7 x 21.7 MILS 9.0 MILS 3.5 MILS DIAMETER 3.5 x 3.5 MILS Al - 30,000Å Au - 10,000Å BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) Central TM PROCESS CP618 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002)