CP705

PROCESS Small Signal Transistor PNP - High Current Transistor Chip CP705 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 11,300 PRINCIPAL DEVICE TYPES 2N4033 CMPT4033 CXT4033 CZT4033 EPITAXIAL PLANAR 31 x 31 MILS 9.0 MILS 5.9 x 11.8 MILS 6.5 x 13.8 MILS Al - 30,000Å Au - 18,000Å BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) Central TM PROCESS CP705 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002)