CP710

PROCESS Small Signal Transistor PNP - High Voltage Transistor Chip CP710 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 16,880 PRINCIPAL DEVICE TYPES CMPTA94 CXTA94 CZTA94 MPSA94 EPITAXIAL PLANAR 26 x 26 MILS 9.0 MILS 6.1 x 4.9 MILS 5.2 x 5.2 MILS Al - 30,000Å Au - 18,000Å BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) Central TM PROCESS CP710 Semiconductor Corp. Typical Electrical Characteristics "ON" Voltage 1.4 1.2 1 V, Voltage (V) 0.8 0.6 0.4 0.2 0 1 VBE(S) @ IC/IB = 10 VCE(S) @ IC/IB = 10 T A = 25°C 10 100 1000 IC, Collector Current (mA) 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002)