CP710V

PROCESS Small Signal Transistor CP710V PNP - High Voltage Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 25,214 PRINCIPAL DEVICE TYPES CMLTA94 CMPTA94 CMPTA92E CXTA92 CZTA92 CZTA94 EPITAXIAL PLANAR 26 x 26 MILS 7.1 MILS 6.1 x 4.9 MILS 5.2 x 5.2 MILS Al - 30,000Å Au - 18,000Å R0 (5-August 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP710V Typical Electrical Characteristics R0 (5-August 2010) w w w. c e n t r a l s e m i . c o m