CP716V_10

PROCESS Small Signal Transistors CP716V PNP - High Voltage Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 29,659 PRINCIPAL DEVICE TYPES CMUT5401 CMPT5401 CXT5401 EPITAXIAL PLANAR 19.7 x 19.7 MILS 7.1 MILS 4.0 x 4.0 MILS 4.7 x 4.7 MILS Al - 30,000Å Au - 18,000Å BACKSIDE COLLECTOR R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP716V Typical Electrical Characteristics R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m