CP736V-2N5401-CT

CP736V-2N5401 PNP - High Voltage Transistor Die 0.6 Amp, 150 Volt w w w. c e n t r a l s e m i . c o m The CP736V-2N5401 die is a PNP silicon transistor designed for high voltage amplifier applications. MECHANICAL SPECIFICATIONS: Die Size B E 17.3 x 17.3 MILS Die Thickness 7.1 MILS Base Bonding Pad Size 3.9 x 3.9 MILS Emitter Bonding Pad Size 3.9 x 3.9 MILS Top Side Metalization Al-Si - 17,000Å Back Side Metalization Au - 9,000Å Scribe Alley Width 1.8 MILS Wafer Diameter 5 INCHES Gross Die Per Wafer 57,735 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Operating and Storage Junction Temperature SYMBOL VCBO VCEO 160 UNITS V 150 V VEBO IC 5.0 V 600 mA TJ, Tstg -65 to +150 °C MAX 50 UNITS nA 50 nA ELECTRICAL SYMBOL ICBO IEBO CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCB=120V BVCBO IC=100µA 160 V BVCEO IC=1.0mA 150 V BVEBO IE=10µA 5.0 VCE(SAT) IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE VEB=3.0V IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=5.0V, IC=1.0mA V 0.5 V 1.0 V 1.0 V 50 VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA 60 hFE fT VCE=10V, IC=10mA, f=100MHz 100 Cob VCB=10V, IE=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz hfe V 0.2 240 50 40 300 MHz 6.0 pF 200 R2 (23-May 2017) w w w. c e n t r a l s e m i . c o m CP736V-2N5401 Typical Electrical Characteristics w w w. c e n t r a l s e m i . c o m R2 (23-May 2017) BARE DIE PACKING OPTIONS BARE DIE IN TRAY (WAFFLE) PACK CT: Singulated die in tray (waffle) pack. (example: CP211-PART NUMBER-CT) CM: S  ingulated die in tray (waffle) pack 100% visually inspected as per MIL-STD-750, (method 2072 transistors, method 2073 diodes). (example: CP211-PART NUMBER-CM) UNSAWN WAFER WN: Full wafer, unsawn, 100% tested with reject die inked. (example: CP211-PART NUMBER-WN) SAWN WAFER ON PLASTIC RING WR: F  ull wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. (example: CP211-PART NUMBER-WR) Please note: Sawn Wafer on Metal Frame (WS) is possible as a special order. Please contact your Central Sales Representative at 631-435-1110. Visit the Central website for a complete listing of specifications: www.centralsemi.com/bdspecs R2 (3-April 2017) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). CONTACT US Corporate Headquarters & Customer Support Team Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Main Tel: (631) 435-1110 Main Fax: (631) 435-1824 Support Team Fax: (631) 435-3388 www.centralsemi.com Worldwide Field Representatives: www.centralsemi.com/wwreps Worldwide Distributors: www.centralsemi.com/wwdistributors For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER, which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms w w w. c e n t r a l s e m i . c o m (001)