CP757X

PROCESS Small Signal MOSFET Transistor P-Channel Enhancement-Mode MOSFET Chip CP757X PROCESS DETAILS Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization 22 x 17 MILS 5.9 MILS 3.9 x 3.9 MILS 14 x 9 MILS Al-Si - 30,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 6 INCH WAFER 63,570 PRINCIPAL DEVICE TYPE CMLDM5757 R0 (2-December 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP757X Typical Electrical Characteristics R0 (2-December 2010) w w w. c e n t r a l s e m i . c o m