CP794R

PROCESS Small Signal MOSFET Transistor P - Channel Enhancement-Mode Transistor Chip CP794R PROCESS DETAILS Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization 15.7 x 15.7 MILS 3.9 MILS 3.9 x 3.9 MILS 9.1 x 8.1 MILS Al-Si - 35,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 6 INCH WAFER 95,400 PRINCIPAL DEVICE TYPES CEDM8004 CMLM0584 CMLDM7484 R0 (29-July 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP794R Typical Electrical Characteristics R0 (29-July 2010) w w w. c e n t r a l s e m i . c o m