CPD102X

PROCESS CPD102X Schottky Diode High Voltage Schottky Diode Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 9.0 x 9.0 MILS 5.9 MILS 4.8 MILS DIAMETER Al - 30,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 210,600 PRINCIPAL DEVICE TYPES CMDD6263 CMKD6263 CMLD6263 Series CMOD6263 CMPD6263 Series CMSD6263 Series CMUD6263E Series 1N6263 R0 (27-September 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD102X Typical Electrical Characteristics R0 (27-September 2010) w w w. c e n t r a l s e m i . c o m