PROCESS
CPD104R
Schottky Diode
Low VF Schottky Diode Chip
PROCESS DETAILS Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization 14.6 x 14.6 MILS 3.9 MILS 11.8 x 11.8 MILS Al - 30,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 5 INCH WAFER 80,698 PRINCIPAL DEVICE TYPES CFSH2-3L
R0 (1-February 2011)
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PROCESS
CPD104R
Typical Electrical Characteristics
R0 (1-February 2011)
w w w. c e n t r a l s e m i . c o m
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