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CPD16-CMR1U-06M-CT

CPD16-CMR1U-06M-CT

  • 厂商:

    CENTRAL

  • 封装:

    Module

  • 描述:

    DIODE GPP ULT FAST 1A CHIP FORM

  • 数据手册
  • 价格&库存
CPD16-CMR1U-06M-CT 数据手册
CPD16-CMR1U-06M Ultra Fast Rectifier Die 1.0 Amp, 600 Volt w w w. c e n t r a l s e m i . c o m The CPD16-CMR1U-06M is a silicon 1.0 Amp, 600 Volt ultra fast recovery rectifier ideal for all types of commercial, industrial, entertainment, and computer applications. MECHANICAL SPECIFICATIONS: ANODE BACKSIDE CATHODE R0 Die Size 51 x 51 MILS Die Thickness 14 MILS Anode Bonding Pad Size 34 x 34 MILS Top Side Metalization Ni/Au – 5,000Å/2,000Å Back Side Metalization Ni/Au – 5,000Å/2,000Å Scribe Alley Width 2.0 MILS Wafer Diameter 4 INCHES Gross Die Per Wafer 4,250 MAXIMUM RATINGS: (TA=25°C) Peak Repetitive Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Current Peak Forward Surge Current, tp=8.3ms Operating and Storage Junction Temperature ELECTRICAL SYMBOL IR VF CHARACTERISTICS: (TA=25°C) TEST CONDITIONS VR=600V IF=1.0A trr IF=0.5A, IR=1.0A, Irr=0.25A SYMBOL VRRM 600 UNITS V VR 600 V VR(RMS) IO 420 V 1.0 A IFSM TJ, Tstg 30 A -65 to +150 °C MAX 5.0 UNITS μA 1.4 V 75 ns MIN PACKING OPTIONS: • CPD16-CMR1U-06M-CT: Singulated die in waffle pack; 400 die per tray. • CPD16-CMR1U-06M-WN: Full wafer, unsawn, 100% tested with reject die inked. • CPD16-CMR1U-06M-WR: Full wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. R0 (4-March 2015) CPD16-CMR1U-06M Typical Electrical Characteristics w w w. c e n t r a l s e m i . c o m R0 (4-March 2015)
CPD16-CMR1U-06M-CT 价格&库存

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