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CPD24-CMR1F-06M-CT

CPD24-CMR1F-06M-CT

  • 厂商:

    CENTRAL

  • 封装:

    Module

  • 描述:

    DIODE FAST REC 1A CHIP FORM

  • 数据手册
  • 价格&库存
CPD24-CMR1F-06M-CT 数据手册
CPD24-CMR1F-06M Fast Rectifier Die 1.0 Amp, 600 Volt w w w. c e n t r a l s e m i . c o m The CPD24-CMR1F-06M is a silicon 1.0 Amp, 600 Volt fast recovery rectifier ideal for all types of commercial, industrial, entertainment, and computer applications. MECHANICAL SPECIFICATIONS: ANODE BACKSIDE CATHODE Die Size 51 x 51 MILS Die Thickness 11 MILS Anode Bonding Pad Size 35 x 35 MILS Top Side Metalization Ni/Au – 5,000Å/2,000Å Back Side Metalization Ni/Au – 5,000Å/2,000Å Scribe Alley Width 2.0 MILS Wafer Diameter 4 INCHES Gross Die Per Wafer 4,250 R1 MAXIMUM RATINGS: (TA=25°C) Peak Repetitive Reverse Voltage SYMBOL VRRM DC Blocking Voltage VR VR(RMS) IO RMS Reverse Voltage Average Forward Current Peak Forward Surge Current, tp=8.3ms Operating and Storage Junction Temperature ELECTRICAL SYMBOL IR IR IFSM TJ, Tstg CHARACTERISTICS: (TA=25°C unless otherwise) TEST CONDITIONS MIN VR=600V 600 UNITS V 600 V 420 V 1.0 A 30 A -65 to +150 °C MAX 5.0 UNITS μA μA VR=600V, TA=125°C IF=1.0A 200 VF 1.3 V trr IF=0.5A, IR=1.0A, Irr=0.25A 250 ns PACKING OPTIONS: • CPD24-CMR1F-06M-CT: Singulated die in waffle pack; 400 die per tray. • CPD24-CMR1F-06M-WN: Full wafer, unsawn, 100% tested with reject die inked. • CPD24-CMR1F-06M-WR: Full wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. R0 (4-March 2015) CPD24-CMR1F-06M Typical Electrical Characteristics w w w. c e n t r a l s e m i . c o m R0 (4-March 2015)
CPD24-CMR1F-06M-CT 价格&库存

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