PROCESS
CPD41
Switching Diode
High Current Switching Diode Chip
PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 19.7 x 19.7 MILS 8.0 MILS 6.5 x 6.5 MILS Al - 30,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER 30,394 PRINCIPAL DEVICE TYPES 1N3600 1N4150 CMPD4150
R4 (22-March 2010)
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PROCESS
CPD41
Typical Electrical Characteristics
R4 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
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