CPD64

PROCESS Low Leakage Diode Low Leakage Diode Chip CPD64 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 17.5 x 17.5 MILS 8.0 MILS 8.0 MILS DIAMETER Al - 30,000Å Au - 6,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 36,890 PRINCIPAL DEVICE TYPES CMPD3003 1N3595 BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) Central TM PROCESS CPD64 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002)