CPD66X

PROCESS CPD66X Low Leakage Diode Low Leakage Diode Chip PROCESS DETAILS Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization 17.5 x 17.5 MILS 5.9 MILS 7.9 MILS DIAMETER Al - 30,000Å Au-As - 13,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 54,848 PRINCIPAL DEVICE TYPES CMOD3003 CMLD3003DOG CMPD3003A CMPD3003C CMPD3003S R1 (19-July 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD66X Typical Electrical Characteristics R1 (19-July 2010) w w w. c e n t r a l s e m i . c o m