CPD74_10

PROCESS CPD74 Switching Diode Monolithic Isolated Quad Switching Diode Chip PROCESS DETAILS Die Size Die Thickness Anode 1, 2, 3, 4 Bonding Pad Area Cathode 1, 2, 3, 4 Bonding Pad Area Top Side Metalization Back Side Metalization 25 x 25 MILS 6.0 MILS 3.5 x 4.0 MILS 3.5 x 4.0 MILS Al - 12,000Å Au - 5,000Å GEOMETRY GROSS DIE PER 3 INCH WAFER 10,000 PRINCIPAL DEVICE TYPES CMEDA-6i R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD74 Typical Electrical Characteristics R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m