CPD80V

Central TM PROCESS Semiconductor Corp. Switching Diode CPD80V High Voltage Switching Diode Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 16 x 16 MILS 7.1 MILS 6.5 x 6.5 MILS Al - 30,000Å Au.As - 13,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 45,050 PRINCIPAL DEVICE TYPES CMPD2003 CMPD2004 CMPD2005 1N3070 CMDD2004 CMSD2004 CMOD2004 CMXD2004 CMLD2004 BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (17-August 2004) Central TM PROCESS CPD80V Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (17-August 2004)