CPD82X_10

PROCESS CPD82X Schottky Diode High Current, Low VF Schottky Diode Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 14.6 x 14.6 MILS 5.5 MILS 11.8 x 11.8 MILS Al - 30,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 80,282 PRINCIPAL DEVICE TYPES CMDSH2-3 CMDSH2-4L CMOSH2-4L CMUSH2-4L CMKSH2-4L CMXSH2-4L R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD82X Typical Electrical Characteristics R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m