PROCESS
CPD83V
Switching Diode
High Speed Switching Diode Chip
Central
TM
Semiconductor Corp.
PROCESS DETAILS Process Die Size Die Thickness Anode Bonding pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 11 x 11 MILS 7.1 MILS 3.3 x 3.3 MILS Al - 30,000Å Au.As - 13,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER 94,130 PRINCIPAL DEVICE TYPES CMPD914 CMPD4448 1N914 1N914B 1N4148 1N4448 1N4154 1N4454 CMPD2836 CMPD2838 CMPD7000
BACKSIDE CATHODE
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R1 (25- April 2005)
Central
TM
PROCESS
CPD83V
Semiconductor Corp.
Typical Electrical Characteristics
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R1 (25- April 2005)
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