CPD91V_10

PROCESS CPD91V Switching Diode Low Leakage Switching Diode Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 11 x 11 MILS 7.1 MILS 3.35 x 3.35 MILS Al - 15,000Å Au-As - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 137,880 PRINCIPAL DEVICE TYPES CMPD6001 Series CMOD6001 CMLD6001 CMLD6001DO CMDD6001 R2 (3-August 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD91V Typical Electrical Characteristics R2 (3-August 2010) w w w. c e n t r a l s e m i . c o m