CPD98V_10

PROCESS CPD98V Schottky Diode Silicon High Current Schottky Diode Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 11 x 11 MILS 7.1 MILS 5.4 x 5.4 MILS Al - 30,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 141,234 PRINCIPAL DEVICE TYPES CMUSH2-4 Series R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD98V Typical Electrical Characteristics R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m