CPS090

PROCESS CPS090 Silicon Controlled Rectifier 8.0 Amp Sensitive Gate SCR Chip PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization Glass Passivated Mesa 90 x 90 MILS 8.7 MILS 60 x 30 MILS 22 x 22 MILS Al - 45,000Å Al/Mo/Ni/Ag - 32,000Å GEOMETRY GROSS DIER PER 4 INCH WAFER 1,310 PRINCIPAL DEVICE TYPES CS220-8M Series CSD-8M Series CSDD-8M Series 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (4- January 2006)