CPS130

PROCESS CPS130 Silicon Controlled Rectifier 16 Amp Sensitive Gate SCR Chip PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization Glass Passivated Mesa 130 x 130 MILS 8.7 MILS 99 x 49 MILS 42 x 42 MILS Al - 45,000Å Al/Mo/Ni/Ag - 32,000Å GEOMETRY GROSS DIER PER 4 INCH WAFER 624 PRINCIPAL DEVICE TYPES CS220-16M Series CSDD-16M Series 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (4- January 2006)