PROCESS
CPS165
Silicon Controlled Rectifier
35 Amp Sensitive Gate SCR Chip
PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization Glass Passivated Mesa 165 x 165 MILS 8.7 MILS 131 x 91 MILS 31 x 31 MILS Al - 45,000Å Al/Mo/Ni/Ag - 32,000Å
GEOMETRY
GROSS DIER PER 4 INCH WAFER 376 PRINCIPAL DEVICE TYPES CS220-35M Series
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R0 (4- January 2006)
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